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Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
| Erscheinungsjahr: | 2012 |
|---|---|
| Fachbereich: | Nachrichtentechnik |
| Genre: | Importe, Technik |
| Rubrik: | Naturwissenschaften & Technik |
| Medium: | Buch |
| Inhalt: | Gebunden |
| ISBN-13: | 9780071754279 |
| ISBN-10: | 007175427X |
| Sprache: | Englisch |
| Einband: | Gebunden |
| Autor: |
Gan, Zhenghao
Wong, Waisum Liou, Juin J |
| Hersteller: | McGraw Hill LLC |
| Verantwortliche Person für die EU: | Libri GmbH, Europaallee 1, D-36244 Bad Hersfeld, gpsr@libri.de |
| Maße: | 229 x 152 x 33 mm |
| Von/Mit: | Zhenghao Gan (u. a.) |
| Erscheinungsdatum: | 31.10.2012 |
| Gewicht: | 0,993 kg |
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